STW62NM60N - STMicroelectronics

STW62NM60N N-CHANNEL MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1.

Features

N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package Datasheet − production data Order code STW62NM60N VDS 600 V RDS(on) max 0.049 Ω ID 65 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance Applications
■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit.