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STW65N023M9-4 |
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| Part Number | STW65N023M9-4 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 tech... |
| Features |
Order code
VDS
RDS(on) max.
ID
STW65N023M9-4
650 V
23.0 mΩ
92
• Worldwide best FOM RDS(on)*Qg among silicon-based devices • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance thanks to the extra driving source pin • Easy to drive • 100% avalanche tested Gate(4) Driver source(3) Applications • High efficiency switching applications Power source(2) ND1TPS2DS3G4 Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silico... |
| Document |
 STW65N023M9-4 Data Sheet
PDF 427.83KB |
| Distributor | Stock | Price | Buy |
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