STW52NK30Z - ST Microelectronics

STW52NK30Z N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special Figure 2: Internal Schematic Diagram care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series DataSheet4U.com complements ST ful.

Features

TYPE STW54NK30Z s s s s s s Figure 1: Package ID 54 A Pw 300 W BVDSS 300 V RDS(on) < 0.060 Ω TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 3 2 1 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special Figure 2: Internal Schematic Diagram care is taken to ensure a very good dv/dt capability for the most demanding appl.