STW45NM60 - INCHANGE

STW45NM60 N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW45NM60 ·FEATURES ·High dv/dt and avalanche capabilities ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Tight process control and high manufacturing yields ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Sw.

Features

·High dv/dt and avalanche capabilities
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Tight process control and high manufacturing yields
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching application
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 45 28 180 PD Total Dissipation 417 Tch Max. Operating Junction Temperature 150 Tstg Stor.