STW45N65M5 - INCHANGE

STW45N65M5 N-Channel MOSFET

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 78mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P.

Features

·Drain Current
  –ID= 35A@ TC=25℃
·Drain Source Voltage- : VDSS= 650V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 78mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 35 A IDM Drain Current-Single Pluse 140 A PD Total Dissipation @TC=25℃ 210 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storag.