STW40N20 - STMicroelectronics

STW40N20 N-CHANNEL MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. 1 D2PAK Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UPS Tab.

Features

TYPE www.DataSheet4U.com STP40N20 Figure 1: Package ID 40 A 40 A 40 A Pw 160 W 160 W 160 W 3 1 2 1 2 3 VDSS 200 V 200 V 200 V RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω STW40N20 STB40N20
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■ TYPICAL RDS(on) = 0.038 Ω GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS
*Qg) 100% AVALANCHE TESTED TO-220 TO-247 3 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary swi.