STW24NK55Z - ST Microelectronics

STW24NK55Z N-channel Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. Table 1. Device su.

Features

Type www.DataSheet4U.com VDSS 550 V RDS(on) <0.22 Ω ID 23 A Pw 285 W STW24NK55Z
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■ Extremely high dv/dt capability 100% avalanche tested 1 2 3 Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability TO-247 Application
■ Switching applications Figure 1. Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most d.