STW13NM60N - STMicroelectronics

STW13NM60N N-CHANNEL Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal s.

Features

Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance TAB 3 2 1 TO-220FP 123 I²PAK TAB TAB 3 2 1 TO-220 3 2 1 IPAK 3 2 1 TO-247 Applications
■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate .