STW13009 - STMicroelectronics

STW13009 High Voltage Fast Switching NPN Power Transistor

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds. Figure 1. Internal schematic diagram Table 1. Device summary Marking (1) W13009 L Package TO-247 W13009 H Packaging Tube Order code STW13009 1. Product is .

Features

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■ Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 1 Application
■ Switch mode power supplies TO-247 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds. Figure 1. Internal schematic diagram Table 1. Device summary Marking (1) W13009 L Package TO-247 W13009 H Packaging Tube Order code STW13009 1. Product is pre-selected in DC current gai.