AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficienc.
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2 STU13N60M2
650 V
0.38 Ω
11 A
STW13N60M2
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are the.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STW13N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STW13N95K3 |
ST Microelectronics |
Power MOSFETs | |
3 | STW13NB60 |
STMicroelectronics |
N - CHANNEL PowerMESH MOSFET | |
4 | STW13NB60FI |
STMicroelectronics |
N - CHANNEL PowerMESH MOSFET | |
5 | STW13NK100Z |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
6 | STW13NK50Z |
ST Microelectronics |
Power MOSFETs | |
7 | STW13NK60Z |
ST Microelectronics |
N-channel Power MOSFET | |
8 | STW13NK80Z |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
9 | STW13NM50N |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STW13NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
11 | STW13NM60N |
INCHANGE |
N-Channel MOSFET | |
12 | STW13009 |
STMicroelectronics |
High Voltage Fast Switching NPN Power Transistor |