STS3419 - SamHop Microelectronics

STS3419 P-Channel Enhancement Mode Field Effect Transistor

Green Product STS3419 Ver 2.2 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -3.8A R DS(ON) (m Ω) Max 65 @ VGS=-10V 90 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. Halogen free. S OT -23 D S G G D S ABSOLUTE MAXIMUM R.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. Halogen free. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c a c Limit -30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.8 -3.0 -14 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are sub.