STS3417 - SamHop Microelectronics

STS3417 P-Channel Enhancement Mode Field Effect Transistor

Gr Pr STS3417 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 96 @ VGS=-4.5V -30V -3A 100 @ VGS=-4.0V 103 @ VGS=-3.7V 111 @ VGS=-3.1V 123 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D .

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D S OT -23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a a Limit -30 ±12 TA=25°C TA=25°C -3 -11 1.25 -55 to 150 Units V V A A W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Au.