STS3404 - SamHop Microelectronics

STS3404 N-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 3404 S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 30V F E AT UR E S S uper high dense cell design for low R DS (ON ). ID 3A R DS (ON) ( m Ω ) Max 60 @ V G S = 10V 100 @ V G S =4.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM .

Features

Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID = 3A V GS = 4.5V, ID = 2A V DS = 5V, V GS = 4.5V V DS = 5V, ID =3A Min Typ C Max Unit 30 1 100 1 1.5 45 70 10 6 310 73 38 3 65 110 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Trans.