STP75NF75L - ST Microelectronics

STP75NF75L N-CHANNEL MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate .

Features

oltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 75 75 ± 15 75 70 300 300 2 20 680 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C (
•) Current limited by package (
•
•) Pulse width limited by safe operating area. April 2002 . (1) ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T .