STP75N15 - ST Microelectronics

STP75N15 N-CHANNEL MOSFET

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. D²PAK Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UPS Table .

Features

TYPE STP75N15 STB75N15T4 STW75N15 s s s s Figure 1: Package ID 75 A 75 A 75 A Pw 300 W 300 W 350 W 3 1 2 2 1 3 VDSS 150 V 150 V 150 V RDS(on) < 0.023 Ω < 0.023 Ω < 0.023 Ω s s TYPICAL RDS(on) = 20 mΩ GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS
*Qg) 100% AVALANCHE TESTED TO-220 TO-247 3 1 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced hig.