STP75N3LLH6 - STMicroelectronics

STP75N3LLH6 N-channel MOSFET

This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(1) S(3) AM01474v1 Table 1. Device summary Marking Package DPAK TO-220 75N3LLH6 IPAK Short IPAK Tube Packaging Tape and reel Order co.

Features

TAB TAB Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS RDS(on) max < 0.0055 Ω ID 3 2 1 1 3 DPAK TAB 30 V < 0.0059 Ω 75 A IPAK TAB
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* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 2 1 3 3 1 2 Short IPAK TO-220 Application Switching applications Figure 1. Internal schematic diagram D (TAB or 2) Description This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET e.