STP70NF03L - ST Microelectronics

STP70NF03L N-CHANNEL MOSFET

This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting transistor shows the best trade-off between onresistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This.

Features

mbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 15 70 50 280 100 0.67 4
  –65 to 175 175 (1) ISD ≤70A, di/dt ≤290A/µs, VDD =24 V ; Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area March 2001 1/9 ST.