STP5N62K3 - STMicroelectronics

STP5N62K3 N-channel MOSFET

These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for th.

Features

Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3
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■ VDSS RDS(on) max. ID Pw 3 3 1 1 2 70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W 1 2 3 TO-220 DPAK TO-220FP 100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. 3 1 1 3 2 D²PAK IPAK Internal schematic diagram D(2) Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroel.