STP5N60M2 - STMicroelectronics

STP5N60M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. DS9958 - Rev 5 - October 2018 For further information co.

Features

Order code VDS@ TJmax STD5N60M2 STP5N60M2 650 V STU5N60M2
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected RDS(on) max. 1.4 Ω ID 3.5 A Applications
• Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. DS9958 - Rev 5 - October 2018 For.