STP5N120 - STMicroelectronics

STP5N120 N-Channel Power MOSFET

) -The SuperMESH™ series is obtained through an t(sextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to ucpushing on-resistance significantly down, special dcare is taken to ensure a very good dv/dt rocapability for the most demanding applications. PSuch series complements ST full range of high Obsoletevoltage Power MOS.

Features

Type VDSS RDS(on) ID PW STP5N120 1200 V < 3.5 Ω 4.7 A 160 W t(s)
■ 100% avalanche tested
■ Extremely high dv/dt capability uc
■ ESD improved capability rod
■ New high voltage benchmark
■ Gate charge minimized lete PApplication o
■ Switching applications ObsDescription ) -The SuperMESH™ series is obtained through an t(sextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to ucpushing on-resistance significantly down, special dcare is taken to ensure a very good dv/dt rocapability for the most demanding applications. PSuch series complements ST full range of .