The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.
n-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4.2 2.6 16.8 100 0.8 3.5
–60 to 150
(
*)Limited only by maximum Temperature allowed
Value STP(B)4NC60A(-1) 600 600 ±30 4.2(
*) 2.6(
*) 16.8(
*) 35 0.28 3.5 2500 STP4NC60AFP
Unit V V V A A A W W/°C V/ns V °C
(
•)Pulse width limited by safe operating.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP4NC60A |
ST Microelectronics |
N-CHANNEL MOSFET | |
2 | STP4NC60 |
STMicroelectronics |
N-CHANNEL MOSFET | |
3 | STP4NC60FP |
ST Microelectronics |
N-CHANNEL MOSFET | |
4 | STP4NC50 |
ST Microelectronics |
N-CHANNEL MOSFET | |
5 | STP4NC50FP |
ST Microelectronics |
N-CHANNEL MOSFET | |
6 | STP4NC80Z |
ST Microelectronics |
N-CHANNEL MOSFET | |
7 | STP4NC80ZFP |
STMicroelectronics |
N-CHANNEL MOSFET | |
8 | STP4N150 |
STMicroelectronics |
N-Channel MOSFET | |
9 | STP4N20 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP4N40 |
ST Microelectronics |
N-Channel MOSFET | |
11 | STP4N40FI |
STMicroelectronics |
N-Channel Enhancement Mode Power MOS Transistor | |
12 | STP4N52K3 |
STMicroelectronics |
N-channel Power MOSFET |