STP4NC50FP - ST Microelectronics

STP4NC50FP N-CHANNEL MOSFET

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CON.

Features

Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
  –65 to 150 150 (1)ISD ≤ 4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Value STP4NC50 500 500 ±30 4 2.5 12 80 0.64 3.5 2000 4(
*) 2.5(
*) 16(
*) 40 0.32 STP4NC50FP Unit V V V A A A W W/ °C V/ns V °C °C (
•)Pulse width limited by safe operating area May 2000 1/9 STP4NC50/FP THERMAL DATA TO-220 Rthj-case Rthj-amb Rthc-sink.