STP3NK60Z - ST Microelectronics

STP3NK60Z N-CHANNEL Power MOSFET

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2912 .

Features

Order codes VDS RDS(on) max. STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 600 V 3.6 Ω STP3NK60Z STP3NK60ZFP
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected ID 2.4 A Package D2PAK IPAK DPAK TO-220 TO-220FP Applications S(3) AM01475V1
• Switching applications Product status link STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 STP3NK60Z STP3NK60ZFP Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the .