STP24NM65N - STMicroelectronics

STP24NM65N N-channel Power MOSFET

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order co.

Features

www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 3 STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N 19 A 19 A 19 A(1) 19 A 19 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1 2 1. Limited only by maximum temperature allowed
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■ 2 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP TO-247 Figure 1. Internal schematic diagram Application
■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ techn.