STP24N60M2 - STMicroelectronics

STP24N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features

Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.19 Ω 18 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected Applications
• Switching applications G(1) S(3) AM01476v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate c.