STP24NF10 - ST Microelectronics

STP24NF10 N-Channel Power MOSFET

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driv.

Features

Type VDS RDS(on) max. ID STP24NF10 100 V 60 mΩ 26 A
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge D(2, TAB) Applications
• Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirement.