G(1) S(3) AM01476v1 These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power.
Order codes STF15N95K5
3 2 1
VDS
RDS(on)max 0.5 Ω
ID
PTOT 30 W
STP15N95K5 STW15N95K5
950 V
12 A 170 W
TO-220FP
TAB
• TO-220 worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
3 1 2
• Ultra low gate charge
3 2 1
TO-220
• 100% avalanche tested
• Zener-protected
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
Applications
• Switching applications
Description
G(1)
S(3)
AM01476v1
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative prop.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP15N05L |
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2 | STP15N05LFI |
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3 | STP15N06L |
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4 | STP15N06LFI |
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5 | STP15N60M2-EP |
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