STP15NM60N - STMicroelectronics

STP15NM60N N-channel Power MOSFET

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Application ■ Switching applications Or.

Features

www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω ID 1 3 3 12 STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 14A 14A 14A (1) 14A 14A D²PAK I²PAK TO-247 3 1 2 3 1 2 1. Limited only by maximum temperature allowed
■
■
■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Internal schematic diagram Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to t.