This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 14N.
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Type
VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V
RDS(on) max < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω < 0.38 Ω
ID
3
STI14NM65N STB14NM65N STF14NM65N STP14NM65N STW14NM65N
12 A 12 A 12 A(1) 12 A 12 A
1
2
3 12
TO-220
3 1
I²PAK
D²PAK
3
1. Limited only by maximum temperature allowed
■
■
■
2
3
1
2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
TO-247
1
TO-220FP
Application
■
Figure 1.
Internal schematic diagram
Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP14NM50N |
ST Microelectronics |
Power MOSFETs | |
2 | STP14NM50N |
INCHANGE |
N-Channel MOSFET | |
3 | STP14N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP14NF06 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP14NF10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
6 | STP14NF10FP |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
7 | STP14NF12 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STP14NF12FP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
9 | STP14NK50Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STP14NK50ZFP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
11 | STP14NK60Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
12 | STP14NK60ZFP |
ST Microelectronics |
N-CHANNEL Power MOSFET |