This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge driv.
Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 175 (1) ISD ≤14A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 14A, VDD = 50V Value STP14NF12 120 120 ±20 14 9 56 60 0.4 9 60 2500 8.5 6 34 25 0.17 STP14NF12FP Unit V V V A A A W W/°C V/ns mJ V °C (q ) Pulse width limited by safe operating area August 2002 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP14NF12 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
2 | STP14NF10 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
3 | STP14NF10FP |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
4 | STP14NF06 |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
5 | STP14N80K5 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STP14NK50Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
7 | STP14NK50ZFP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
8 | STP14NK60Z |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
9 | STP14NK60ZFP |
ST Microelectronics |
N-CHANNEL Power MOSFET | |
10 | STP14NM50N |
ST Microelectronics |
Power MOSFETs | |
11 | STP14NM50N |
INCHANGE |
N-Channel MOSFET | |
12 | STP14NM65N |
STMicroelectronics |
N-channel Power MOSFET |