STP14NF06 - ST Microelectronics

STP14NF06 N-CHANNEL Power MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICAT.

Features

at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 14 10 56 45 0.3 6 50
  –65 to 175 175 (1) I SD ≤7A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (2) Starting T j = 25°C, I D = 114A, VDD = 15V Unit V V V A A A W W/°C V/ns mJ °C °C (q) Pulse width limited by safe operating area December 2000 1/8 STP14NF06 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal .