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isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP12NM50FP ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.35Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be suitable for increasing power density of high voltage converters allowing system mi.
· Drain-source on-resistance:
RDS(on) ≤ 0.35Ω@10V
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Be suitable for increasing power density of high voltage converters
allowing system miniaturization and higher efficiencies.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
48
PD
Total Dissipation @TC=25℃
35
Tj
Max. Operating Junction Temperature
150
T.
STP12NM50FP - STMicroelectronics
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates .
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|---|---|---|---|---|
| 1 | STP12NM50 |
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| 2 | STP12NM50 |
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| 3 | STP12NM50N |
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| 4 | STP12NM60N |
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