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This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status links STF12N65M5 STP12N65M5 P.
Order code
VDS @ TJ max.
RDS(on) max.
STF12N65M5 STP12N65M5
710 V
430 mΩ
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
ID 8.5 A
G(1) S(3)
Applications
• Switching applications
AM01475v1_noZen
Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior effici.
STP12N65M5 - INCHANGE
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast.
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