STP12N60M2 - STMicroelectronics

STP12N60M2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order code STP12N60M2 Table 1: Device summary Marking Package.

Features

Order code VDS RDS(on) max. ID PTOT STP12N60M2 600 V 0.450 Ω 9 A 85 W
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order code STP12N60M2 Table 1: Device summary Marking Packa.