STP11N65M5 - STMicroelectronics

STP11N65M5 N-channel Power MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicat.

Features

Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 VDSS @ RDS(on) TJmax max ID 710 V < 0.48 Ω 9 A
■ Worldwide best RDS(on)
* area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested Applications
■ Switching applications TAB TAB 2 3 1 D2PAK 23 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 IPAK Figure 1. Internal schematic diagram $4!" Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ .