STP11NC40FP - ST Microelectronics

STP11NC40FP N-CHANNEL Power MOSFET

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SU.

Features

y 2002 1/10 STP11NC40, STP11NC40FP ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg Parameter STP11NC40 Value STP11NC40FP Unit V V V 9.5 (
*) 6 (
*) 38 (
*) 30 0.24 A A A W W/°C V/ns 2500 V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 9.5 6 38 12.