This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC.
NA40FI 400 400 ± 30
o
Unit
V DS V DGR V GS ID ID I DM (
•) P tot V ISO T stg Tj
Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
V V V 6 3.8 40 45 0.36 2000 A A A W W/ o C V
o o
10 6.3 40 125 1 -65 to 150 150
C C
(
•) Pulse width limited by safe operating area
November 1996
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP10NA40FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
2 | STP10N03 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | STP10N105K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STP10N10L |
ST Microelectronics |
N-Channel Enhancement Mode Low Threshold Power MOS Transistor | |
5 | STP10N10LFI |
ST Microelectronics |
N-Channel Enhancement Mode Low Threshold Power MOS Transistor | |
6 | STP10N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
7 | STP10N62K3 |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STP10N65K3 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP10N95K5 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STP10NB20 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | |
11 | STP10NB20FP |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET | |
12 | STP10NB50 |
ST Microelectronics |
N-CHANNEL Power MOSFET |