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STP10NA40 |
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| Part Number | STP10NA40 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
| Features |
NA40FI 400 400 ± 30
o
Unit
V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o V V V 6 3.8 40 45 0.36 2000 A A A W W/ o C V o o 10 6.3 40 125 1 -65 to 150 150 C C ( •) Pulse width limited by safe operating area November 1996 1/10 www.DataSheet4U.com ww... |
| Document |
 STP10NA40 Data Sheet
PDF 299.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STP10NA40FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
|
| 2 | STP10N03 |
SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor |
|
| 3 | STP10N105K5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STP10N10L |
ST Microelectronics |
N-Channel Enhancement Mode Low Threshold Power MOS Transistor |
|
| 5 | STP10N10LFI |
ST Microelectronics |
N-Channel Enhancement Mode Low Threshold Power MOS Transistor |
|