STP10N65K3 - STMicroelectronics

STP10N65K3 N-channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order codes STB10N65.

Features

TAB 3 1 D2PAK 3 2 1 TO-220FP TAB I2PAKFP (TO-281) 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$% Order codes STB10N65K3 STF10N65K3 STFI10N65K3 STP10N65K3 VDS RDS(on) max ID PTOT 150 W 650 V 1 Ω 10 A 35 W 150 W
• 100% avalanche tested
• Extremely low on-resistance RDS(on)
• Gate charge minimized
• Very low intrinsic capacitances
• Improved diode reverse recovery characteristics
• Zener-protected
* 6 AM01476v1 Applications
• Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ .