STN3NE06L - STMicroelectronics

STN3NE06L N-CHANNEL MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK.

Features

e Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 60 60 ± 20 3 1.8 12 2.5 0.02 6 -65 to 150 150 (1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C (
•) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 August 1998 1/5 STN3NE06L THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Ma.