The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and ot.
CHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN3456 2008. V1 STN3456 N Channel Enhancement Mode MOSFET 6.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±20 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current ID IDM 6.0 5.0 30 Continuous Source Current (Diode Conduction) IS 1.7 Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ 2.0 1.3 150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STN3456ST6RG |
Stanson Technology |
MOSFET | |
2 | STN3400 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
3 | STN3400A |
Semtron |
N-Channel Enhancement Mode MOSFET | |
4 | STN3404 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
5 | STN3406 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
6 | STN3414 |
Semtron |
N-Channel Enhancement Mode MOSFET | |
7 | STN3446 |
Stanson Technology |
MOSFET | |
8 | STN3904 |
AUK |
NPN Silicon Transistor | |
9 | STN3904S |
AUK |
NPN Silicon Transistor | |
10 | STN3904SF |
AUK |
NPN Silicon Transistor | |
11 | STN3906 |
AUK |
PNP Silicon Transistor | |
12 | STN3906S |
AUK |
PNP Silicon Transistor |