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STN3NE06L |
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| Part Number | STN3NE06L |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance... |
| Features |
e Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Value 60 60 ± 20 3 1.8 12 2.5 0.02 6 -65 to 150 150
(1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ o C V/ns
o o
C C
( •) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 August 1998 1/5 STN3NE06L THERMAL DATA R thj-pcb R thj-amb Tl Thermal Resistance Junction-PC Board Ma... |
| Document |
 STN3NE06L Data Sheet
PDF 76.05KB |
| Distributor | Stock | Price | Buy |
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