STL7N6F7 - STMicroelectronics

STL7N6F7 N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6(D) 5(D) 4(S) Bottom view AM11269v1 Order code STL7N6F7 Marking ST7N Table 1: Device summary Package PowerFLAT™.

Features

Order code STL7N6F7 VDS 60 V RDS(on) max 0.025 Ω ID 7A
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6(D) 5(D) 4(S) Bottom view AM11269v1 Order code STL7N6F7 Marking ST7N Table 1: Device summary Package.