The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is designed for use in compact fluorescent lamps. TO-92 Figure 1. Internal schema.
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Integrated antiparallel collector-emitter diode
Application
■ Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is designed for use in compact fluorescent lamps.
TO-92 Figure 1. Internal schematic diagram
Table 1. Device su.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STL73 |
STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
2 | STL70N10F3 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STL70N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STL71 |
STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
5 | STL72 |
STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
6 | STL75N3LLZH5 |
ST Microelectronics |
Power MOSFETs | |
7 | STL75N8LF6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STL75NH3LL |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STL76DN4LF7AG |
STMicroelectronics |
Dual N-channel Power MOSFET | |
10 | STL7DN6LF3 |
STMicroelectronics |
Dual N-channel Power MOSFET | |
11 | STL7LN65K5AG |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STL7LN80K5 |
STMicroelectronics |
N-channel Power MOSFET |