The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is designed for use in Compact Fluorescent Lamps. Table 1: Order Codes www.DataS.
-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 700 400 9 0.6 1.5 0.4 0.75 0.95 -65 to 150 150 Unit V V V A A A A W °C °C
Table 3: Thermal Data
Rthj-amb Thermal Resistance Junction-Ambient Max 131.6
oC/W
Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol ICEV IEBO Parameter Collector Cut-off Current VCE = 700 V (VBE = -1.5 V) Emitter-Cut-off Current (IC = 0 ) VCEO(sus)
* Collector-Emitter Sustainin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STL70N10F3 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STL70N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STL72 |
STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
4 | STL73 |
STMicroelectronics |
MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
5 | STL73D |
STMicroelectronics |
High voltage fast-switching NPN power transistor | |
6 | STL75N3LLZH5 |
ST Microelectronics |
Power MOSFETs | |
7 | STL75N8LF6 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
8 | STL75NH3LL |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STL76DN4LF7AG |
STMicroelectronics |
Dual N-channel Power MOSFET | |
10 | STL7DN6LF3 |
STMicroelectronics |
Dual N-channel Power MOSFET | |
11 | STL7LN65K5AG |
STMicroelectronics |
N-channel Power MOSFET | |
12 | STL7LN80K5 |
STMicroelectronics |
N-channel Power MOSFET |