STL7DN6LF3 - STMicroelectronics

STL7DN6LF3 Dual N-channel Power MOSFET

This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Top view Order code Table 1. Device summary Marking Package STL7DN6LF3 7DN6LF3 PowerFLAT™ 5x6 double island(1) 1. For wettable flank option, please contact ST sale o.

Features

Order code STL7DN6LF3 VDS 60 V RDS(on) max 43 mΩ ID 6.5 A
• Designed for automotive application and AEC-Q101 qualified
• Logic level VGS(th)
• 175 °C junction temperature
• 100% avalanche rated
• Wettable flank package Figure 1. Internal schematic diagram Applications
• Switching applications Description This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Top view Order code Table 1. Device summary Marking Package STL7DN6LF3 7DN6LF3 PowerFLAT™ 5x.