STL165N10F8AG - STMicroelectronics

STL165N10F8AG Automotive N-channel Power MOSFET

The STL165N10F8AG is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL165N10F8AG.

Features

Order code VDS RDS(on) max. 4 3 2 1 PowerFLAT 5x6 STL165N10F8AG
• AEC-Q101 qualified
• MSL1 grade 100 V 3.2 mΩ D(5, 6, 7, 8) 8765
• 175 °C maximum operating junction temperature
• 100% avalanche tested
• Low gate charge Qg
• Wettable flank package G(4) Applications ID 158 A S(1, 2, 3) 1234 Top View AM15540v3
• Automotive motor control
• Electro mobility Description The STL165N10F8AG is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-.