S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status STL160N4F7 Product summary Order code STL160N4F7 Marking .
Order code
V DS
RDS(on) max
STL160N4F7
40 V
2.5 mΩ
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
ID 120 A
D(5, 6, 7, 8)
8 76 5
Applications
• Switching applications
G(4)
Description
S(1, 2, 3)
12 34 Top View
AM15540v2
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Product status STL160N4F7
.
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