STH275N8F7-2AG - STMicroelectronics

STH275N8F7-2AG N-CHANNEL POWER MOSFET

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH275N8F7-2AG STH275N8F7-6AG Table 1: Device summary Marking Package 275N8F7 H²PAK-2 H²PAK-6 Pack.

Features

Order code STH275N8F7-2AG STH275N8F7-6AG VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH275N8F7-2AG STH275N8F7-6AG Table 1: Device.