STH272N6F7-6AG - STMicroelectronics

STH272N6F7-6AG N-CHANNEL POWER MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH272N6F7-6AG Table 1: Device summary Marking Package 272N6F7 H²PAK-6 Packing Tape and reel March.

Features

Order code STH272N6F7-6AG VDS 60 V RDS(on) max. 1.5 mΩ ID 180 A
 Designed for automotive applications and AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness Applications
 Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH272N6F7-6AG Table 1.